Photonics company Coherent has launched the SES18-880A-190-10, a high-power 880 nm single-emitter laser diode on sub mount, ...

Compound semiconductor wafer company IQE plc and Quinas Technology, a British semiconductor company, have completed a £1.1 ...

Key features of the QPA1722 include a frequency range of 17.7–20.2 GHz, 10W saturated output power (6W linear), 1 GHz ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

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Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...

This funding has been awarded by the Spanish Ministry of Industry and Tourism under the second call of the Strategic Project ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...