Wolfspeed. Guy Moxey, VP of power development at Wolfspeed, emphasized at PCIM how SiC is transforming industrial e-mobility. SiC offers superior efficiency and power density over traditional silicon, ...

If the SW switch is closed for a time t 1, at the ends of load R, there is the voltage V s.Conversely, if this switch is open for a time t 2, at the ends of load R, the voltage is 0 V.The rapid ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

The sizing coefficient Kd can be chosen between 1 and 1.6 if a shell sheet is used, or between 0.7 and 1.2 if a two-column sheet is used. This parameter allows us to use more copper (with a low Kd ...

The inclusion of the thermal vias is done by selecting this option in the input selection, as shown in Figure 3c. The vias used in this model have a 7.8-mil diameter, with 0.78-mil Cu-plating wall ...

Self-oscillating Topology. One of the most commonly used topologies of class D audio amplifiers is known as self-oscillation. Self-oscillating class D audio amplifiers are characterized by having an ...

Wide bandgap (WBG) semiconductors, such as SiC and GaN, offer important advantages in terms of reliability, energy efficiency, power density, and cost reduction. Power electronics is evolving day by ...

Wafer-level burn-in is a crucial step in WBG semiconductor manufacturing. It involves subjecting the wafers to elevated temperatures and electrical stresses for a specified period, as defined by the ...

where E util represents the useful output energy and E in represents the total input energy. E util therefore represents energy that the system or device is designed to produce or provide.. To ...

A typical EV powertrain consists of a battery pack, inverters for power transfer and electric motor(s) through a final reduction drive. For hybrid vehicles and plug-in hybrid vehicles, there are ...

EPC is a leader in the manufacture of enhancement-mode GaN (eGaN) discrete HEMT and IC power products ranging from 15 V to 350 V. These are targeted for use across a wide variety of applications. Some ...

Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important ...