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powerelectronicsworld
10h
Turbocharging the GaN MOSFET with a HfOâ‚‚ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
powerelectronicsworld
10h
Wolfspeed launches new Gen 4 MOSFET technology
Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...
powerelectronicsworld
18h
Element Six unveils Cu-diamond composite
Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...
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