M3GAN 2.0 is repackaged memes and soulless dialogue wrapped up in an exaggerated girl power aesthetic that never feels ...

Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV. Such structures are of interest because no doped buffer ...

This paper presents a fully-integrated half-bridge GaN driver for bidirectional power transfer. Three-level/bipolar gate driver is introduced for the power switches to improve reliability at high ...